PART |
Description |
Maker |
CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44 From old datasheet system GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44 256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
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CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 |
256K X 8 STANDARD SRAM, 12 ns, PDSO44 256K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM 256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36 TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
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ETC GSI Technology, Inc. Electronic Theatre Controls, Inc. GSI[GSI Technology]
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M27C2001-70B6TR M27C2001-12B1 M27C2001-12N6TR M27C |
256K X 8 OTPROM, 70 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDIP32 256K X 8 OTPROM, 120 ns, PDSO32 256K X 8 OTPROM, 80 ns, PDIP32 256K X 8 UVPROM, 80 ns, CDIP32 256K X 8 OTPROM, 120 ns, PQCC32
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STMICROELECTRONICS
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GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
|
http:// GSI Technology, Inc.
|
KM4132G512 |
256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32x 2组同步图RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS880V37AT-200I GS880V37AT-250 GS880V37AT-250I GS8 |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 3 ns, PQFP100
|
GSI Technology, Inc. GSI[GSI Technology]
|
GS880V37BGT-333I GS880V37BGT-360I GS880V37BT-360 G |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 1.8 ns, PQFP100
|
GSI Technology, Inc. GSI[GSI Technology]
|
MR2A16ACYS35 MR2A16AVTS35C MR2A16ACTS35C MR0A16AVY |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 256K x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司 椋???″????浣?涓??)??????
|
T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog... TMT[Taiwan Memory Technology] TM Technology, Inc.
|
CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位)的动态与江户页面模式内存
|
Integrated Circuit Solu... Cypress Semiconductor Corp. Integrated Circuit Solution Inc
|
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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